Growth of Single-Walled Carbon Nanotubes by Plasma CVD

CVD growth control of single-walled carbon nanotubes

Chemical vapor deposition (CVD) of singlewalled carbon nanotubes (SWNTs) has been improved in growth controllability for the practical application in electronic and optical devices. Vertically aligned growth of nitrogen-doped and small-diameter SWNTs and horizontally aligned growth on crystal quartz are described. By developing the patterned growth technique, transparent and flexible field effe...

Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method

Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of ...

Recent Progress of Plasma CVD for Structure Controlled Growth of Single-Walled Carbon Nanotubes

Large Scale CVD Synthesis of Single-Walled Carbon Nanotubes

The synthesis of bulk amounts of high quality single-walled carbon nanotubes (SWNTs) is accomplished by optimizing the chemical compositions and textural properties of the catalyst material used in the chemical vapor deposition (CVD) of methane. A series of catalysts are derived by systematically varying the catalytic metal compounds and support materials. The optimized catalysts consist of Fe/...

Diameter Controlled CVD Synthesis of Single-Walled Carbon Nanotubes

In this study, we systematically investigated the influence of catalyst preparation procedures on the mean diameter of single-walled carbon nanotubes (SWNTs) synthesized by the alcohol catalytic chemical vapor deposition (ACCVD) process. It was found that the SWNT diameter is dependent upon both reduction temperature and time, with lower reduction temperature and/or shorter reduction time resul...